The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Aug. 24, 2020
Applicant:
Kioxia Corporation, Minato-ku, JP;
Inventors:
Assignee:
Kioxia Corporation, Minato-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11578 (2017.01); H01L 29/66 (2006.01); H01L 27/1157 (2017.01); H01L 27/11565 (2017.01);
U.S. Cl.
CPC ...
H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 27/11578 (2013.01);
Abstract
A semiconductor memory device of an embodiment includes: a semiconductor layer; a gate electrode layer; a first insulating layer provided between the semiconductor layer and the gate electrode layer; a second insulating layer provided between the first insulating layer and the gate electrode layer; and an intermediate layer provided between the first insulating layer and the second insulating layer, the intermediate layer containing a first crystal of a space group Pbca (space group number), a space group P4/nmc (space group number), or a space group R-m (space group number), and the intermediate layer containing hafnium (Hf), oxygen (O), and nitrogen (N).