The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2021

Filed:

Mar. 02, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Tsunehiro Ino, Fujisawa Kanagawa, JP;

Kazuhiko Yamamoto, Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/1159 (2017.01); H01L 27/11597 (2017.01); H01L 27/11502 (2017.01); H01L 27/11514 (2017.01);
U.S. Cl.
CPC ...
H01L 27/1159 (2013.01); H01L 27/11502 (2013.01); H01L 27/11514 (2013.01); H01L 27/11597 (2013.01);
Abstract

According to an embodiment, a memory device includes a first conductive layer extending in a first direction, a second conductive layer extending in the first direction, a third conductive layer extending in a second direction intersecting with the first direction, an insulating layer provided between the first conductive layer and the second conductive layer, and a dielectric layer provided between the first conductive layer and the third conductive layer, and between the insulating layer and the third conductive layer, the dielectric layer having a first thickness thinner than a second thickness, the first thickness being a thickness between the first conductive layer and the third conductive layer, the second thickness being a thickness between the insulating layer and the third conductive layer, and the dielectric layer including an oxide including at least one of hafnium oxide and zirconium oxide.


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