The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Mar. 09, 2023
Kioxia Corporation, Tokyo, JP;
Tsunehiro Ino, Fujisawa, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A memory device of embodiments includes: a semiconductor layer extending in a first direction; a gate electrode layer containing a first material or a second material, the first material containing tantalum (Ta), tungsten (W), and nitrogen (N), an atomic concentration of nitrogen being less than a sum of an atomic concentration of tantalum and an atomic concentration of tungsten, the second material containing niobium (Nb), molybdenum (Mo), and nitrogen (N), and an atomic concentration of nitrogen being less than a sum of an atomic concentration of niobium and an atomic concentration of molybdenum; a charge storage layer provided between the semiconductor layer and the gate electrode layer; a first insulating layer provided between the semiconductor layer and the charge storage layer; and a second insulating layer provided between the charge storage layer and the gate electrode layer.