The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2022
Filed:
Mar. 12, 2021
Kioxia Corporation, Tokyo, JP;
Kunifumi Suzuki, Yokkaichi, JP;
Kiwamu Sakuma, Yokkaichi, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor memory device includes a first memory transistor, a first memory capacitor, and a control circuit connected to them. The first memory transistor includes a first gate electrode, a first semiconductor layer, and a first insulating film containing an insulating material. The first memory capacitor includes a first electrode, a second electrode, and a second insulating film containing the insulating material of the first insulating film. The control circuit is configured to perform a first program operation that supplies the first gate electrode with a first program voltage, a second program operation that supplies the first gate electrode with a second program voltage larger than the first program voltage, and a first read operation that supplies at least one of the first electrode or the second electrode with a voltage. The control circuit performs the first or the second program operation after performing the first read operation.