The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Aug. 08, 2018
Toshiba Memory Corporation, Minato-ku, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
A semiconductor memory device includes: a substrate; a memory cell array including memory cells arranged in a first direction intersecting a surface of the substrate; an insulating layer covering the memory cell array; and a transistor provided on the insulating layer. The transistor includes: first and second semiconductor layers provided on the insulating layer; a gate electrode provided between the first and second semiconductor layers, one end in the first direction of the gate electrode being closer to the substrate than the first and second semiconductor layers; a gate insulating film provided on the one end and on side surfaces of the gate electrode; and a third semiconductor layer facing the one end and the side surfaces of the gate electrode. The third semiconductor layer includes a crystal grain larger than a shortest distance between the insulating layer and the gate insulating film.