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For the Inventor, By the Inventor

Yokkaichi, Japan

Masumi Saitoh

USPTO Granted Patents = 85 

Average Co-Inventor Count = 3.0

ph-index = 8

Forward Citations = 243(Granted Patents)

Forward Citations (Not Self Cited) = 203(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Kanagawa-ken, JP (2013 - 2016)
  • Kanagawa, JP (2009 - 2021)
  • Yokohama, JP (2010 - 2021)
  • Mie, JP (2018 - 2022)
  • Yokkaichi, JP (2015 - 2023)
  • Yokkaichi Mie, JP (2020 - 2023)
  • Yokohama Kanagawa, JP (2020 - 2024)

Company Filing History:

goldMedal35 out of 2,955 
 
Toshiba Memory Corporation
 patents
silverMedal33 out of 52,722 
 
Kabushiki Kaisha Toshiba
 patents
bronzeMedal16 out of 2,737 
 
Kioxia Corporation
 patents
4. 1 out of 1 
 
Toshiba Mitsubishi Corporation
 patent

Years Active: 2009-2024

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Areas of Expertise:
Semiconductor Memory Device
Ferroelectric Field Effect Transistor
Nonvolatile Memory Device
Memory Chip
Scanning Probe Microscope
NAND Flash Memory
Variable Resistance Element
Thin Film Semiconductor Device
Semiconductor Integrated Circuit
Data Erasure Technology
Memory Element
Control Circuit
85 patents (USPTO):Explore Patents
1. 11929352 - Semiconductor memory device having transistors between bonding pads and word lines (2024-03-12),
2. 11776632 - Semiconductor memory device (2023-10-03),
3. 11737281 - Semiconductor memory device (2023-08-22),
4. 11723211 - Semiconductor memory device having ferroelectric field effect transistor (2023-08-08),
5. 11715534 - Semiconductor storage device capable of selectively erasing data (2023-08-01),
6. 11672129 - Memory device (2023-06-06),
7. 11605647 - Ferroelectric-type semiconductor memory device with hole transfer-type layer (2023-03-14),
8. 11538791 - Semiconductor memory device including a memory chip and a circuit chip bonded to the memory chip (2022-12-27),
9. 11514970 - Memory device and method having a control circuit configured to acquire information on a state of a control target, causes the control target to execute a read and write operation based on the state (2022-11-29),
10. 11430500 - Semiconductor storage device (2022-08-30),
11. 11398487 - Storage device (2022-07-26),
12. 11282559 - Memory device (2022-03-22),
13. 11195858 - Ferroelectric memory device (2021-12-07),
14. 11195844 - Semiconductor memory device and method of manufacturing the same (2021-12-07),
15. 11125775 - Probe and manufacturing method of probe for scanning probe microscope (2021-09-21),

Title: The Innovative Mind of Masumi Saitoh

Introduction: Masumi Saitoh is a pioneering inventor hailing from Yokkaichi, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Masumi Saitoh's latest patents showcase his commitment to pushing the boundaries of technological advancement, with a focus on inventions that aim to improve efficiency and enhance user experiences.

Career Highlights: Throughout his illustrious career, Masumi Saitoh has consistently demonstrated a keen eye for innovation, leading to the development of numerous cutting-edge technologies that have revolutionized the industry.

Collaborations: Masumi Saitoh has collaborated with some of the brightest minds in the industry, pooling together expertise to create inventions that have left a lasting impact on the world of technology.

Conclusion: Masumi Saitoh's relentless pursuit of innovation and his passion for pushing the limits of what is possible have solidified his reputation as a visionary inventor in Yokkaichi, Japan, and beyond.

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