The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Mar. 08, 2021
Kioxia Corporation, Tokyo, JP;
Harumi Seki, Kawasaki, JP;
Masumi Saitoh, Yokkaichi, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor memory device of an embodiment includes a first gate electrode layer and a second gate electrode layer extending parallel to each other, a semiconductor layer between the first and the second gate electrode layer intersecting with the first and the second gate electrodes, and a dielectric layer surrounding the semiconductor layer, the dielectric layer containing oxygen and one of hafnium oxide or zirconium, the dielectric layer including a first region containing crystal of orthorhombic or trigonal as a main component between the first gate electrode layer and the semiconductor layer, a second region containing crystal of orthorhombic or trigonal as a main component between the second gate electrode layer and the semiconductor layer, and a third region containing a substance other than crystal of orthorhombic or trigonal as a main component between the first region and the second region.