The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2023
Filed:
Mar. 01, 2021
Kioxia Corporation, Tokyo, JP;
Yusuke Tanaka, Kawasaki Kanagawa, JP;
Masumi Saitoh, Yokkaichi Mie, JP;
Kensuke Ota, Yokohama Kanagawa, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor memory device includes a ferroelectric layer and a first semiconductor layer. The first semiconductor layer is electrically connected to a first electrode and a second electrode and includes an n-type oxide semiconductor. A third electrode is opposite the first semiconductor layer. The ferroelectric layer is between the third electrode and the first semiconductor layer. A second semiconductor layer includes at least one of a Group IV semiconductor material or a p-type oxide semiconductor material. The first semiconductor layer is between the ferroelectric layer and the second semiconductor layer.