The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Sep. 05, 2019
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Marina Yamaguchi, Yokkaichi Mie, JP;

Masumi Saitoh, Yokohama Kanagawa, JP;

Kiwamu Sakuma, Yokkaichi Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/146 (2013.01); G11C 13/004 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0069 (2013.01); H01L 27/2436 (2013.01); H01L 27/2481 (2013.01); H01L 45/16 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0078 (2013.01);
Abstract

A memory device of an embodiment includes: a first conductive layer; a second conductive layer; a first region provided between the first conductive layer and the second conductive layer, being in contact with the first conductive layer and the second conductive layer, and including a first metal oxide, the first metal oxide corresponding to at least one selected from a group consisting of tantalum oxide, lanthanum oxide, and hafnium oxide; and a first layer provided between the first conductive layer and the second conductive layer and including a second metal oxide different from the first metal oxide.


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