The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Feb. 12, 2015
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); H01L 27/10 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0011 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); H01L 27/101 (2013.01); G11C 2013/0073 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/15 (2013.01); G11C 2213/33 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/142 (2013.01); H01L 45/148 (2013.01);
Abstract
According to one embodiment, a resistance-change memory includes a memory cell and a control circuit. The memory cell comprises first and second electrodes, and a variable resistance layer disposed between the first electrode and the second electrode. The control circuit applies a voltage between the first electrode and the second electrode to perform writing, erasing, and reading. During the writing, the control circuit applies a first voltage pulse between the first electrode and the second electrode, and then applies a second voltage pulse different in polarity from the first voltage pulse after applying the first voltage pulse.