The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Jul. 06, 2015
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Kensuke Ota, Kawasaki, JP;
Masumi Saitoh, Yokkaichi, JP;
Kiwamu Sakuma, Yokkaichi, JP;
Daisuke Matsushita, Fujisawa, JP;
Chika Tanaka, Yokohama, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
A semiconductor device of an embodiment includes an oxide semiconductor layer including a first region, a second region and the third region provided between the first region and the second region. The oxide semiconductor layer contains indium (In), gallium (Ga), and zinc (Zn). The first and second regions have thinner film thickness and lower indium (In) concentration than the third region. An insulating film is provided on the third region, and an electrode is provided on the insulating film. A first conductive layer is provided under the first region and electrically connected with the first region. A second conductive layer is provided under the second region and electrically connected with the second region.