The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Mar. 16, 2016
Toshiba Memory Corporation, Minato-ku, JP;
Tsunehiro Ino, Fujisawa, JP;
Daisuke Matsushita, Fujisawa, JP;
Yasushi Nakasaki, Yokohama, JP;
Misako Morota, Kawasaki, JP;
Akira Takashima, Fuchu, JP;
Kenichiro Toratani, Kuwana, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
A nonvolatile semiconductor memory device according to an embodiment comprises a memory cell, the memory cell comprising: a semiconductor layer; a control gate electrode; a charge accumulation layer disposed between the semiconductor layer and the control gate electrode; a first insulating layer disposed between the semiconductor layer and the charge accumulation layer; and a second insulating layer disposed between the charge accumulation layer and the control gate electrode, the charge accumulation layer including an insulator that includes silicon and nitrogen, and the insulator further including: a first element or a second element, the second element being different from the first element; and a third element different from the first element and the second element.