The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Mar. 08, 2016
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Daisuke Matsushita, Hiratsuka, JP;
Yuuichiro Mitani, Kanagawa-Ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 21/314 (2006.01); H01L 27/115 (2017.01); H01L 27/11521 (2017.01); H01L 27/11568 (2017.01); H01L 29/423 (2006.01); H01L 29/792 (2006.01); H01L 27/11517 (2017.01); H01L 29/788 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/518 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 21/3145 (2013.01); H01L 27/115 (2013.01); H01L 27/11517 (2013.01); H01L 27/11521 (2013.01); H01L 27/11568 (2013.01); H01L 29/4234 (2013.01); H01L 29/4916 (2013.01); H01L 29/513 (2013.01); H01L 29/78 (2013.01); H01L 29/788 (2013.01); H01L 29/792 (2013.01);
Abstract
It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: forming an amorphous silicon layer on an insulating layer; introducing oxygen into the amorphous silicon layer; and forming a silicon oxynitride layer by nitriding the amorphous silicon layer having oxygen introduced thereinto.