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For the Inventor, By the Inventor

Taipei, Taiwan

Ching-Te Chuang

This inventor holds 19 USPTO granted patents and 2 published patent applications, primarily in Static Random Access Memory. Top assignees: National Yang Ming Chiao Tung University, Faraday Technology Corporation. Active years: 2011-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ching-Te Chuang. Retrieved from https://idiyas.com/inventor/ching-te-chuang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19 

% Patents Active = 89.5

Average Co-Inventor Count = 5.3

ph-index = 7

Forward Citations = 128(Granted Patents)


Location History:

  • Taipei, TW (2012)
  • Taipei County, TW (2011 - 2014)
  • Hsinchu, TW (2012 - 2016)
  • New Taipei, TW (2013 - 2016)

Company Filing History:

goldMedal16 out of 1,247 
 
National Yang Ming Chiao Tung University
 patents
silverMedal9 out of 412 
 
Faraday Technology Corporation
 patents
where one patent can have more than one assignee

Years Active: 2011-2016

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Areas of Expertise:
Dual-Port SRAM
Static Memory Cell
Bit-Line Voltage Controller
Ripple Bit Lines
Current Leakage
Variation Tolerance
Data-Aware Write Operation
Low Power SRAM
Threshold Voltage Measurement
FinFET SRAM Cell
Schmitt Trigger
Memory Cell
19 patents (USPTO):Explore Patents
1. 9466357 - Circuit for mitigating write disturbance of dual-port SRAM (2016-10-11),
2. 9275726 - Static memory cell (2016-03-01),
3. 9159403 - Control circuit of SRAM and operating method thereof (2015-10-13),
4. 8854897 - Static random access memory apparatus and bit-line voltage controller thereof (2014-10-07),
5. 8837207 - Static memory and memory cell thereof (2014-09-16),
6. 8804445 - Oscillato based on a 6T SRAM for measuring the bias temperature instability (2014-08-12),
7. 8773894 - Static random access memory with ripple bit lines/search lines for improving current leakage/variation tolerance and density/performance (2014-07-08),
8. 8717807 - Independently-controlled-gate SRAM (2014-05-06),
9. 8693237 - Single-ended SRAM with cross-point data-aware write operation (2014-04-08),
10. 8659936 - Low power static random access memory (2014-02-25),
11. 8582378 - Threshold voltage measurement device (2013-11-12),
12. 8385149 - Gate oxide breakdown-withstanding power switch structure (2013-02-26),
13. 8345504 - Data-aware dynamic supply random access memory (2013-01-01),
14. 8325512 - SRAM writing system and related apparatus (2012-12-04),
15. 8320164 - Static random access memory with data controlled power supply (2012-11-27),

Title: The Innovative Journey of Ching-Te Chuang

Introduction:

Ching-Te Chuang, a pioneering inventor hailing from New Taipei, Taiwan, has made significant contributions to the world of technology and innovation through his groundbreaking inventions.

Latest Patents:

Chuang's latest patents showcase his commitment to pushing the boundaries of technological advancement, with a focus on areas such as renewable energy, artificial intelligence, and sustainable materials.

Career Highlights:

Throughout his illustrious career, Ching-Te Chuang has been recognized for his innovative spirit and forward-thinking approach. His inventions have not only revolutionized industries but have also improved the quality of life for people around the globe.

Collaborations:

Chuang's collaborative efforts with leading research institutions, universities, and tech companies have been instrumental in bringing his inventions to life. By working with top experts in the field, he has been able to harness the power of collective knowledge and expertise.

Conclusion:

In conclusion, Ching-Te Chuang's dedication to innovation and his relentless pursuit of excellence have solidified his position as a trailblazer in the world of technology. His inventive spirit continues to inspire future generations of inventors to think outside the box and create a better tomorrow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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