The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2014

Filed:

Oct. 09, 2013
Applicant:

National Chiao Tung University, Hsinchu, TW;

Inventors:

Shyh-Jye Jou, Hsinchu, TW;

Ming-Hsien Tu, Hsinchu, TW;

Yu-Hao Hu, Hsinchu, TW;

Ching-Te Chuang, Hsinchu, TW;

Yi-Wei Chiu, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/412 (2006.01);
U.S. Cl.
CPC ...
G11C 11/412 (2013.01);
Abstract

A static memory and a static memory cell are provided. The static memory cell includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first switch, a second switch, a third switch, a first pull-down switch, and a second pull-down switch. When a data writing operation is performed, the latching capability of the latch circuit constituted by the first to the sixth transistors is disabled by turning off the second transistor or the fifth transistor, so that the speed of the data writing operation is increased and the data writing performance is improved. The first switch and the second switch provide a path for reading or writing data, and the third switch is coupled to a bit line for receiving data from or transmitting data to the bit line.


Find Patent Forward Citations

Loading…