The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Mar. 30, 2011
Hao-i Yang, Hsinchu, TW;
Ching-te Chuang, Taipei County, TW;
Wei Hwang, Hsinchu, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
The present invention proposes a gate oxide breakdown-withstanding power switch structure, which is connected with an SRAM and comprises a first CMOS switch and a second CMOS switch respectively having different gate-oxide thicknesses or different threshold voltages. The CMOS switch, which has a normal gate-oxide thickness or a normal threshold voltage, provides current for the SRAM to wake up the SRAM from a standby or sleep mode to an active mode. The CMOS switch, which has a thicker gate-oxide thickness or a higher threshold voltage, provides current for the SRAM to work in an active mode. The present invention prevents a power switch from gate-oxide breakdown lest noise margin, stabilization and performance of SRAM be affected.