The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Mar. 24, 2011
Ching-te Chuang, Taipei County, TW;
Wei-chiang Shih, Taipei, TW;
Hung-yu Lee, Pingtung County, TW;
Jihi-yu Lin, Kaohsiung County, TW;
Ming-hsien Tu, Tainan, TW;
Shyh-jye Jou, Hsinchu County, TW;
Kun-di Lee, Hsinchu County, TW;
Ching-Te Chuang, Taipei County, TW;
Wei-Chiang Shih, Taipei, TW;
Hung-Yu Lee, Pingtung County, TW;
Jihi-Yu Lin, Kaohsiung County, TW;
Ming-Hsien Tu, Tainan, TW;
Shyh-Jye Jou, Hsinchu County, TW;
Kun-Di Lee, Hsinchu County, TW;
Faraday Technology Corp., Hsin-Chu, TW;
Abstract
SRAM writing system and related apparatus are provided. The writing system of the invention has a dummy replica writing circuit, a negative pulse controller and at least a normal writing circuit; each normal writing circuit includes a write driver and a negative pulse supplier. While writing, the dummy replica writing circuit drives a dummy replica bit-line, such that the negative pulse controller generates a negative pulse control signal according to level of the dummy replica bit-line. In each writing circuit, when the write driver conducts to connect an associated bit-line to a bias end for driving a level transition, the negative pulse supplier switches the bias end from an operation voltage to a different negative pulse voltage according to the received negative pulse control signal.