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For the Inventor, By the Inventor

Taipei, Taiwan

Wei-Chiang Shih

This inventor holds 14 USPTO granted patents and 1 published patent application. Top assignees: Faraday Technology Corporation, National Yang Ming Chiao Tung University, M31 Technology Corporation. Active years: 2009-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wei-Chiang Shih. Retrieved from https://idiyas.com/inventor/wei-chiang-shih

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 14 

% Patents Active = 92.9

Average Co-Inventor Count = 3.8

ph-index = 5

Forward Citations = 77(Granted Patents)


Location History:

  • Hsinchu, TW (2012)
  • Taipei, TW (2009 - 2016)
  • Hsinchu County, TW (2020)
  • Zhubei, TW (2020)

Company Filing History:

goldMedal7 out of 411 
 
Faraday Technology Corporation
 patents
silverMedal6 out of 1,244 
 
National Yang Ming Chiao Tung University
 patents
bronzeMedal5 out of 58 
 
M31 Technology Corporation
 patents
where one patent can have more than one assignee

Years Active: 2009-2020

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14 patents (USPTO):Explore Patents
1. 10795767 - Error correcting system shared by multiple memory devices (2020-10-06),
2. 10692568 - Memory device capable of releasing stress voltage (2020-06-23),
3. 10692567 - Method for assisting memory cell in access operation and operating memory cell, and memory device having assist circuit with predefined assist strength (2020-06-23),
4. 9378808 - Pulse width modulation device (2016-06-28),
5. 9213789 - Method of generating optimized memory instances using a memory compiler (2015-12-15),
6. 8804445 - Oscillato based on a 6T SRAM for measuring the bias temperature instability (2014-08-12),
7. 8659936 - Low power static random access memory (2014-02-25),
8. 8582378 - Threshold voltage measurement device (2013-11-12),
9. 8345504 - Data-aware dynamic supply random access memory (2013-01-01),
10. 8325512 - SRAM writing system and related apparatus (2012-12-04),
11. 8320164 - Static random access memory with data controlled power supply (2012-11-27),
12. 8213257 - Variation-tolerant word-line under-drive scheme for random access memory (2012-07-03),
13. 7889541 - 2T SRAM cell structure (2011-02-15),
14. 7548456 - Combo memory cell (2009-06-16),

Title: Innovation and Excellence: The Intriguing Work of Wei-Chiang Shih

Introduction:

Wei-Chiang Shih is a remarkable inventor based in Taipei, Taiwan, with an impressive portfolio of 14 patents to his name. His groundbreaking work in the field of technology has significantly contributed to advancements in error-correction systems and memory cell operations.

Latest Patents:

One of Wei-Chiang Shih's latest patents is the "Error Correcting System Shared by Multiple Memory Devices," which introduces an innovative error correcting code (ECC) circuit designed to enhance data reliability in memory devices. Additionally, his patent on the "Method for Assisting Memory Cell in Access Operation" showcases his expertise in optimizing memory cell performance through intelligent assist circuits.

Career Highlights:

Wei-Chiang Shih has honed his skills and expertise through his tenure at prestigious organizations such as Faraday Technology Corporation and the esteemed National Chiao Tung University. His career highlights reflect a commitment to pushing the boundaries of technological innovation and problem-solving in the field of memory systems.

Collaborations:

Throughout his career, Wei-Chiang Shih has collaborated with industry experts such as Ching-Te Chuang and Hao-I Yang. These talented individuals have worked alongside Wei-Chiang Shih to bring his innovative ideas to fruition, further solidifying his reputation as a collaborative and forward-thinking inventor.

Conclusion:

In conclusion, Wei-Chiang Shih's inventive spirit and dedication to technological advancement have established him as a prominent figure in the realm of memory systems and error-correction mechanisms. His contributions continue to inspire and shape the landscape of innovation in the ever-evolving world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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