The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Apr. 10, 2009
Applicants:
Wei-chiang Shih, Taipei, TW;
Chen-hao Po, Taipei County, TW;
Kwo-jen Liu, Taichung, TW;
Inventors:
Assignee:
Faraday Technology Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A SRAM cell structure includes a first N type switch, a second N type switch, a first storage node, and a second storage node. The first N type switch has a control terminal connected to a word line and a first terminal connected to a bit line. The second N type switch has a control terminal connected to the word line and a first terminal connected to an inverted bit line. The first storage node has a first terminal connected to a second terminal of the first N type switch. The second storage node has a first terminal connected to a second terminal of the second N type switch.