The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Aug. 09, 2010
Ching-te Chuang, Hsinchu, TW;
Yi-wei Lin, Hsinchu, TW;
Chia-cheng Chen, Hsinchu, TW;
Wei-chiang Shih, Hsinchu, TW;
Ching-Te Chuang, Hsinchu, TW;
Yi-Wei Lin, Hsinchu, TW;
Chia-Cheng Chen, Hsinchu, TW;
Wei-Chiang Shih, Hsinchu, TW;
Faraday Technology Corp., Science-Based Industrial Park, Hsin-Chu, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
A Random Access Memory (RAM) is provided. The RAM includes a plurality of word-line drivers, at least a first tracking transistor and a second tracking transistor. Each word-line driver has an input node receiving a decoding signal, a power node receiving an operation voltage and a driving node driving a word-line. In an embodiment, the first tracking transistor has two channel terminal nodes respectively coupled to the driving node of one of the word-line driver and a channel terminal node of the second tracking transistor; wherein the first tracking transistor has electronic characteristics tracking those of a driving transistor of word-line driver, and the second tracking transistor has electronic characteristics tracking those of pass-gate transistor(s) in each cell of the RAM.