The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Jan. 19, 2011
Ching-te Chuang, Taipei County, TW;
Hao-i Yang, Taipei, TW;
Yi-wei Lin, Taipei County, TW;
Wei Hwang, Taipei, TW;
Wei-chiang Shih, Taipei, TW;
Chia-cheng Chen, Taichung County, TW;
Ching-Te Chuang, Taipei County, TW;
Hao-I Yang, Taipei, TW;
Yi-Wei Lin, Taipei County, TW;
Wei Hwang, Taipei, TW;
Wei-Chiang Shih, Taipei, TW;
Chia-Cheng Chen, Taichung County, TW;
Faraday Technology Corp., Science-Based Industrial Park, Hsin-Chu, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
A Random Access Memory (RAM) with a plurality of cells is provided. In an embodiment, the cells of a same column are coupled to a same pair of bit-lines and are associated to a same power controller. Each cell has two inverters; the power controller has two power-switches. For the cells of the same column, the two power-switches respectively perform independent supply voltage controls for the two inverters in each cell according to data-in voltages of the bit-lines during Write operation.