The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2012

Filed:

Jan. 05, 2011
Applicants:

Ching-te Chuang, Taipei County, TW;

Hao-i Yang, Taipei, TW;

Mao-chih Hsia, Kaohsiung, TW;

Yung-wei Lin, Taichung County, TW;

Chien-yu LU, Taichung, TW;

Ming-hsien Tu, Tainan, TW;

Wei Hwang, Taipei, TW;

Shyh-jye Jou, Hsinchu County, TW;

Chia-cheng Chen, Taichung, TW;

Wei-chiang Shih, Taipei, TW;

Inventors:

Ching-Te Chuang, Taipei County, TW;

Hao-I Yang, Taipei, TW;

Mao-Chih Hsia, Kaohsiung, TW;

Yung-Wei Lin, Taichung County, TW;

Chien-Yu Lu, Taichung, TW;

Ming-Hsien Tu, Tainan, TW;

Wei Hwang, Taipei, TW;

Shyh-Jye Jou, Hsinchu County, TW;

Chia-Cheng Chen, Taichung, TW;

Wei-Chiang Shih, Taipei, TW;

Assignees:

Faraday Technology Corp., Science-Based Industrial Park, Hsin-Chu, TW;

National Chiao Tung University, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A static random access memory with data controlled power supply, which comprises a memory cell circuit and at least one Write-assist circuit, for providing power to the memory cell circuit according to data to be written to the memory cell circuit.


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