Mao-Chih Hsia

Title: **Mao-Chih Hsia: Innovator in Static Random Access Memory Technology**

Introduction

Mao-Chih Hsia is a distinguished inventor based in Kaohsiung, Taiwan. With a focus on innovations in static random access memory (SRAM) technology, he has contributed significantly to the field with his patents. His work reflects a commitment to enhancing the efficiency and functionality of memory systems, making them more adaptable and power-efficient.

Latest Patents

Mao-Chih Hsia holds two notable patents, showcasing his expertise in SRAM technology:

1. **Low Power Static Random Access Memory**: This innovation involves a SRAM that maintains the memory cell array under low voltage during Standby and Write modes, but increases it to a high voltage during Read mode. The design includes at least one memory cell circuit comprising a latch circuit with two inverters, featuring two power receiving terminals. It efficiently manages power by ensuring that the voltages at the power receiving terminals of the latch circuit remain below a predetermined level when writing data.

2. **Static Random Access Memory with Data Controlled Power Supply**: This patent presents a SRAM that utilizes a data-controlled power supply system. It consists of a memory cell circuit and at least one Write-assist circuit, which provides power to the memory cell circuit based on the data intended for storage. This innovation helps in optimizing power usage according to the specific needs of the data being processed.

Career Highlights

Throughout his career, Mao-Chih Hsia has worked with esteemed organizations, including Faraday Technology Corporation and National Chiao Tung University. His experiences in these institutions have allowed him to refine his skills and expand his knowledge in the field of memory technology.

Collaborations

Mao-Chih has collaborated with several talented individuals during his career, among whom are Ching-Te Chuang and Hao-I Yang. These collaborations have fostered an environment of innovation and have led to substantial contributions in the realm of SRAM technology.

Conclusion

Mao-Chih Hsia's contributions to the development of static random access memory technology are noteworthy. With a clear understanding of the challenges in memory efficiency, his patents reflect a forward-thinking approach that is essential in today's fast-paced technological landscape. His ongoing dedication to innovation ensures that he remains a key figure in the advancement of memory systems.