Jihi-Yu Lin

Title: Jihi-Yu Lin: Innovator in SRAM Technology

Introduction

Jihi-Yu Lin is a notable inventor based in Kaohsiung County, Taiwan. He has made significant contributions to the field of static random access memory (SRAM) technology. With a total of 2 patents, his work focuses on enhancing the efficiency and reliability of memory systems.

Latest Patents

One of his latest patents is the "SRAM writing system and related apparatus." This invention features a writing system that includes a dummy replica writing circuit, a negative pulse controller, and at least one normal writing circuit. Each normal writing circuit comprises a write driver and a negative pulse supplier. The dummy replica writing circuit drives a dummy replica bit-line, allowing the negative pulse controller to generate a negative pulse control signal based on the level of the dummy replica bit-line. This innovative approach ensures improved performance during the writing process.

Another significant patent is the "Disturb-free static random access memory cell." This invention includes a latch circuit with access terminals, multiple switching circuits, and a sensing amplifier. The design aims to determine the bit value appearing at the bit line while minimizing disturbances, thereby enhancing the reliability of SRAM cells.

Career Highlights

Jihi-Yu Lin has worked with prominent organizations such as Faraday Technology Corporation and National Yang Ming Chiao Tung University. His experience in these institutions has allowed him to develop and refine his innovative ideas in memory technology.

Collaborations

Throughout his career, Jihi-Yu Lin has collaborated with talented individuals, including Ching-Te Chuang and Ming-Hsien Tu. These partnerships have contributed to the advancement of his research and inventions.

Conclusion

Jihi-Yu Lin's contributions to SRAM technology through his patents demonstrate his commitment to innovation in the field. His work continues to influence the development of more efficient memory systems.