The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Mar. 07, 2014
Faraday Technology Corp., Hsin-Chu, TW;
Ching-Te Chuang, New Taipei, TW;
Chih-Hao Chang, Yunlin County, TW;
Chao-Kuei Chung, Taichung, TW;
Chien-Yu Lu, Hsinchu, TW;
Shyh-Jye Jou, Hsinchu County, TW;
Ming-Hsien Tu, Hsinchu, TW;
Faraday Technology Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A static memory cell is provided. The static memory cell includes a data latch circuit and a voltage provider. The data latch circuit is configured to store a bit data. The data latch circuit has a first inverter and a second inverter, and the first inverter and the second inverter are coupled to each other. The first inverter and the second inverter respectively receive a first voltage and a second voltage as power voltages. The voltage provider provides the first voltage and the second voltage to the data latch circuit. When the bit data is written to the data latch circuit, the voltage provider adjusts a voltage value of one of the first and second voltages according to the bit data.