Gyeonggi-do, South Korea

Baek Mann Kim

This inventor holds 24 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: Hynix Semiconductor Inc., Skhynix Inc.. Active years: 2009-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Baek Mann Kim. Retrieved from https://idiyas.com/inventor/baek-mann-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 25.0

Average Co-Inventor Count = 5.1

ph-index = 3

Forward Citations = 44(Granted Patents)


Location History:

  • Gyeonggi-so, KR (2011)
  • Gyeonggi-do, KR (2009 - 2012)
  • Kyoungki-do, KR (2009 - 2013)
  • Yongin-si, KR (2009 - 2013)

Company Filing History:


Years Active: 2009-2013

Loading Chart...
Areas of Expertise:
Metal Wire
Semiconductor Device
Vertical Transistor
Buried Bit Line
Diffusion Barrier
Amorphous TaBN Layer
Multilayer Wiring
High Resistance Compound
Tungsten Polymetal Gate
Parasitic Bit Line Capacitance
Metal Line
24 patents (USPTO):Explore Patents

Title: **Baek Mann Kim: A Pioneer in Semiconductor Innovations**

Introduction

Baek Mann Kim, located in Gyeonggi-do, South Korea, is a notable inventor in the field of semiconductor technology. With an impressive portfolio of 24 patents, he has made significant contributions that enhance the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest patents, Baek has developed innovative solutions such as:

1. **Metal wire for a semiconductor device formed with a metal layer without voids therein and a method for forming the same**: This invention includes a semiconductor substrate and an insulating layer with a damascene pattern, featuring a diffusion barrier layer that contains a ruthenium oxide (RuO) layer, preventing aluminum deposits in critical areas. The wiring metal layer, comprising aluminum, is formed using the Metal-Organic Chemical Vapor Deposition (MOCVD) method, ensuring effective filling of the damascene pattern.

2. **Semiconductor memory device having vertical transistor and buried bit line and method for fabricating the same**: This patent describes a semiconductor memory device with an active region that protrudes from the substrate, next to a trench. It outlines the formation of various layers, such as an impurity region and a gate dielectric layer, culminating in a buried bit line that connects through a polysilicon layer to enhance performance.

Career Highlights

Baek Mann Kim has had a stellar career, having worked with leading semiconductor companies like Hynix Semiconductor Inc. and SK hynix Inc. His expertise has driven advancements in semiconductor technologies, playing a crucial role in the evolution of memory devices.

Collaborations

Throughout his career, Baek has collaborated with esteemed colleagues, including Dong Ha Jung and Jeong Tae Kim, both of whom share his dedication and vision for innovative semiconductor solutions.

Conclusion

Baek Mann Kim stands out as a significant figure in the field of semiconductor innovation. With his wealth of patents and collaborative achievements, he continues to influence the industry and contribute to advancing semiconductor technologies in meaningful ways.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…