The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Jun. 17, 2009
Applicants:
Nam Yeal Lee, Gyeonggi-do, KR;
Seung Jin Yeom, Gyeonggi-do, KR;
Baek Mann Kim, Gyeonggi-do, KR;
Dong Ha Jung, Gyeonggi-do, KR;
Joon Seok OH, Gyeonggi-do, KR;
Inventors:
Nam Yeal Lee, Gyeonggi-do, KR;
Seung Jin Yeom, Gyeonggi-do, KR;
Baek Mann Kim, Gyeonggi-do, KR;
Dong Ha Jung, Gyeonggi-do, KR;
Joon Seok Oh, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
An insulation layer is formed on a semiconductor substrate so as to define a metal line forming region. A diffusion barrier having a multi-layered structure of an MoSilayer, an MoSiNlayer, and an MoNlayer is formed on a surface of the metal line forming region. A metal layer is formed on the diffusion barrier so as to fill the metal line forming region of the insulation layer.