The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Jun. 03, 2011
Dong Ha Jung, Gyeonggi-do, KR;
Seung Jin Yeom, Gyeonggi-do, KR;
Baek Mann Kim, Gyeonggi-do, KR;
Young Jin Lee, Gyeonggi-do, KR;
Jeong Tae Kim, Gyeonggi-do, KR;
Dong Ha Jung, Gyeonggi-do, KR;
Seung Jin Yeom, Gyeonggi-do, KR;
Baek Mann Kim, Gyeonggi-do, KR;
Young Jin Lee, Gyeonggi-do, KR;
Jeong Tae Kim, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A metal line in a semiconductor device includes an insulation layer formed on a semiconductor substrate. A metal line forming region is formed in the insulation layer. A metal line is formed to fill the metal line forming region of the insulation layer. And a diffusion barrier that includes an amorphous TaBN layer is formed between the metal line and the insulation layer. The amorphous TaBN layer prevents a copper component from diffusing into the semiconductor substrate, thereby improving upon the characteristics and the reliability of a device.