The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Nov. 14, 2007
Baek Mann Kim, Gyeonggi-do, KR;
Seung Jin Yeom, Gyeonggi-do, KR;
Young Jin Lee, Gyeonggi-do, KR;
Dong Ha Jung, Gyeonggi-do, KR;
Jeong Tae Kim, Gyeonggi-do, KR;
Baek Mann Kim, Gyeonggi-do, KR;
Seung Jin Yeom, Gyeonggi-do, KR;
Young Jin Lee, Gyeonggi-do, KR;
Dong Ha Jung, Gyeonggi-do, KR;
Jeong Tae Kim, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A multi-layered metal line of a semiconductor device and a process of forming the same are described. The multi-layered metal line includes a lower metal line formed on a semiconductor substrate. An insulation layer is subsequently formed on the semiconductor substrate including the lower metal line and has an upper metal line forming region that exposes a portion of the lower metal line. A diffusion barrier formed on a surface of the upper metal line forming region of the insulation layer. The diffusion barrier includes a W—B—N ternary layer. An upper metal line is finally formed on the diffusion barrier to fill the upper metal line forming region of the insulation layer.