The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Nov. 16, 2009
Dong Ha Jung, Gyeonggi-do, KR;
Seung Jin Yeom, Gyeonggi-do, KR;
Baek Mann Kim, Gyeonggi-so, KR;
Young Jin Lee, Gyeonggi-do, KR;
Jeong Tae Kim, Gyeonggi-do, KR;
Dong Ha Jung, Gyeonggi-do, KR;
Seung Jin Yeom, Gyeonggi-do, KR;
Baek Mann Kim, Gyeonggi-so, KR;
Young Jin Lee, Gyeonggi-do, KR;
Jeong Tae Kim, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A metal line of a semiconductor device having a diffusion barrier including CrBand a method for forming the same is described. The metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer is formed having a metal line forming region. A diffusion barrier including a CrBlayer is subsequently formed on the surface of the metal line forming region and the insulation layer. A metal line is finally formed to fill the metal line forming region of the insulation layer on the diffusion barrier including a CrBlayer.