The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8008774 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 30, 2011

Filed:

Apr. 06, 2010
Applicants:

Soo Hyun Kim, Seoul, KR;

Baek Mann Kim, Kyoungki-do, KR;

Young Jin Lee, Kyoungki-do, KR;

Dong Ha Jung, Kyoungki-do, KR;

Jeong Tae Kim, Kyoungki-do, KR;

Inventors:

Soo Hyun Kim, Seoul, KR;

Baek Mann Kim, Kyoungki-do, KR;

Young Jin Lee, Kyoungki-do, KR;

Dong Ha Jung, Kyoungki-do, KR;

Jeong Tae Kim, Kyoungki-do, KR;

Assignee:

Hynix Semiconductor Inc., Kyoungki-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
Abstract

A multi-layer metal wiring of a semiconductor device and a method for forming the same are disclosed. The multi-layer metal wiring of the semiconductor device includes a lower Cu wiring, and an upper Al wiring formed to be contacted with the lower Cu wiring, and a diffusion barrier layer interposed between the lower Cu wiring and the upper Al wiring. The diffusion barrier layer is formed of a W-based layer.


Find Patent Forward Citations

Kim, Soo. (2011). Multi-layer metal wiring of semiconductor device preventing mutual metal diffusion between metal wirings and method for forming the same (U.S. Patent No. 8008774). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8008774

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