The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Sep. 23, 2011
Joon Seok OH, Gyeonggi-do, KR;
Seung Jin Yeom, Gyeonggi-do, KR;
Baek Mann Kim, Gyeonggi-do, KR;
Dong Ha Jung, Gyeonggi-do, KR;
Jeong Tae Kim, Gyeonggi-do, KR;
Nam Yeal Lee, Gyeonggi-do, KR;
Jae Hong Kim, Gyeonggi-do, KR;
Joon Seok Oh, Gyeonggi-do, KR;
Seung Jin Yeom, Gyeonggi-do, KR;
Baek Mann Kim, Gyeonggi-do, KR;
Dong Ha Jung, Gyeonggi-do, KR;
Jeong Tae Kim, Gyeonggi-do, KR;
Nam Yeal Lee, Gyeonggi-do, KR;
Jae Hong Kim, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
An electrical conductor having a multilayer diffusion barrier of use in a resultant semiconductor device is presented. The electrical conductor line includes an insulation layer, a diffusion barrier, and a metal line. The insulation layer is formed on a semiconductor substrate and having a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a multi-layered structure made of TaN layer, an MoOlayer and an Mo layer. The metal line is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.