Wuhan, China

An Zhang

USPTO Granted Patents = 16 

 

Average Co-Inventor Count = 5.7

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2021-2025

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16 patents (USPTO):Explore Patents

Title: An Zhang: Innovator in Memory Device Technology

Introduction

An Zhang is a prominent inventor based in Wuhan, China, known for his significant contributions to memory device technology. With a total of 16 patents to his name, he has made remarkable advancements in the field of semiconductor devices.

Latest Patents

Among his latest patents, An Zhang has developed a "Method of reducing program disturbance in memory device and memory device utilizing same." This invention involves a memory device that includes multiple memory strings and a peripheral circuit designed to optimize programming operations. Another notable patent is the "Programming method for semiconductor device and semiconductor device," which outlines a unique programming method that enhances the efficiency of memory cells during the programming phase.

Career Highlights

An Zhang has worked with several notable companies, including Yangtze Memory Technologies Co., Ltd. and Wuhan Jianghechang Energy and Technology Co., Ltd. His experience in these organizations has allowed him to refine his expertise in memory technology and contribute to innovative solutions in the industry.

Collaborations

Throughout his career, An Zhang has collaborated with talented individuals such as Jianquan Jia and Kaiwei Li. These partnerships have fostered a creative environment that has led to the development of cutting-edge technologies in memory devices.

Conclusion

An Zhang's work in memory device technology exemplifies the spirit of innovation and dedication to advancing semiconductor solutions. His contributions continue to shape the future of memory technology, making him a key figure in the field.

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