The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2026

Filed:

Dec. 15, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Junbao Wang, Wuhan, CN;

Jianquan Jia, Wuhan, CN;

Yuanyuan Min, Wuhan, CN;

Xiangnan Zhao, Wuhan, CN;

Ying Cui, Wuhan, CN;

Kaikai You, Wuhan, CN;

Jiameng Cui, Wuhan, CN;

Lei Guan, Wuhan, CN;

Chenhui Li, Wuhan, CN;

An Zhang, Wuhan, CN;

Lei Jin, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01);
Abstract

According to one aspect, a method of operating a memory is provided. The method may include applying a first power supply voltage to a common source during a program precharge process. The method may include applying a first voltage to a first bottom gate line and applying a second voltage to a second bottom gate line starting at a first moment of the program precharge process. The method may include applying a second power supply voltage to the first bottom gate line and applying a third voltage to the second bottom gate line after the first moment of the program precharge process.


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