Hubei, China

Lei Guan

USPTO Granted Patents = 3 

Average Co-Inventor Count = 4.9

ph-index = 1


Company Filing History:


Years Active: 2025

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3 patents (USPTO):

Title: Innovations by Inventor Lei Guan in Memory Technology

Introduction

Lei Guan, an accomplished inventor based in Wuhan, China, has made a significant impact in the field of memory technology. With one patent to his name, he has shown remarkable ingenuity and creativity in developing innovative solutions that enhance memory device operations.

Latest Patents

Lei Guan's notable patent is focused on a memory device, memory system, and the corresponding read operation method. This invention addresses the challenges faced when a read operation on a memory cell fails. It introduces a method that initiates a second read operation, applying a second pass voltage to unselected word lines while maintaining a first pass voltage on other unselected lines. This innovative approach is designed to improve the reliability and efficiency of read operations in memory devices.

Career Highlights

Guan is currently associated with Yangtze Memory Technologies Co., Ltd., where he contributes to advancing memory technology solutions. His innovative thinking and expertise have been instrumental in developing cutting-edge memory systems that meet the demands of modern technology.

Collaborations

Throughout his career, Lei Guan has collaborated with distinguished professionals, including his coworkers Hongtao Liu and Lei Jin. These partnerships have fostered a creative and productive environment, allowing for the sharing of ideas and insights that further enhance their work in the field of memory technology.

Conclusion

In summary, Lei Guan's contributions to memory technology, exemplified by his patented invention, demonstrate his commitment to innovation and excellence. As a member of Yangtze Memory Technologies Co., Ltd., he continues to push the boundaries of what is possible in memory systems, paving the way for future advancements in technology.

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