The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Feb. 15, 2024
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Jinlong Zhang, Wuhan, CN;
Jianyu Xiang, Wuhan, CN;
Jing Wei, Wuhan, CN;
Lei Guan, Wuhan, CN;
Junyao Zhu, Wuhan, CN;
Yuankang Yang, Wuhan, CN;
Qingqi Li, Wuhan, CN;
Xueqing Huang, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Abstract
Example memory devices, systems, and methods for reducing erase disturb in memory devices are disclosed. One example method includes erasing, during an erase operation of a block in a memory cell array, one or more memory cells in the block. It is verified, during the erase operation of the block, whether the one or more memory cells are erased. Each of one or more blocks in the memory cell array is respectively read during the erase operation of the block, where respectively reading each of the one or more blocks includes applying a first voltage to a first select gate line coupled to a first select gate transistor in the block, and applying a second voltage to a second select gate line coupled to a second select gate transistor in one of the one or more blocks, where the first voltage is lower than the second voltage.