Jing Wei

Title: Jing Wei: Innovator in Memory Device Technology

Introduction

Jing Wei is a prominent inventor based in Wuhan, China, known for his contributions to memory device technology. With a total of 4 patents to his name, he has made significant advancements in the field of electronics and memory systems.

Latest Patents

One of Jing Wei's latest patents is a "Page buffer circuit with bit line select transistor." This invention provides a memory device that includes a memory array, a bit line, and a buffer. The memory array consists of multiple memory strings, which are divided into two groups. The bit line features segments that are coupled to these memory string groups, while the buffer connects to the memory array via the bit line. Notably, the memory array and the buffer can be housed in separate dies, with the first die bonded to the second die.

Another significant patent is related to a "Memory device, programming method of memory device, and memory system." This method involves performing a programming operation on a memory cell using incremental step pulse programming. The operation includes applying voltage steps to the word line to increase the threshold voltage of the memory cell. It also involves determining the quantity of memory cells with threshold voltages between verification voltages and adjusting the programming steps accordingly.

Career Highlights

Jing Wei is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to innovate in the field of memory technology. His work has contributed to the advancement of memory devices, enhancing their efficiency and performance.

Collaborations

Jing Wei collaborates with talented individuals in his field, including coworkers Teng Chen and Yan Wang, who contribute to the development of cutting-edge memory technologies.

Conclusion

Jing Wei's innovative work in memory device technology showcases his expertise and commitment to advancing the field. His patents reflect significant contributions that enhance the functionality and efficiency of memory systems.