The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

Mar. 03, 2021
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Teng Chen, Wuhan, CN;

Yan Wang, Wuhan, CN;

Jing Wei, Wuhan, CN;

Yang Zhang, Wuhan, CN;

Kuriyama Masao, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/24 (2006.01); G11C 16/14 (2006.01); G11C 7/10 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/24 (2013.01); G11C 7/1057 (2013.01); G11C 7/1084 (2013.01); G11C 16/0483 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01);
Abstract

Aspects of the disclosure provide a memory device. For example, the memory device can include a memory array, a bitline and a buffer. The memory array can include a plurality of memory strings. The memory strings can be divided into a first memory string group and a second memory string group. The bitline can include a first bitline segment coupled to the first memory string group and a second bitline segment coupled to the second memory string group. The first bitline segment can be disposed between the first memory string group and the buffer and be connected to the buffer through a first conduction path. The second bitline segment can be disposed between the second memory string group and the buffer and be connected to the buffer through a second conduction path.


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