Kuriyama Masao

Title: Kuriyama Masao: Innovator in Memory Device Technology

Introduction

Kuriyama Masao is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory device technology, holding a total of 2 patents. His work focuses on enhancing the efficiency and functionality of memory devices, which are crucial in modern electronics.

Latest Patents

Masao's latest patents include innovative designs for page buffer circuits with bit line select transistors. These patents describe a memory device that incorporates a memory array, a bit line, and a buffer. The memory array consists of multiple memory strings, which are divided into two groups. The bit line features segments that connect to each memory string group, allowing for improved data management and processing. This design enables the memory array and buffer to be housed in separate dies, enhancing the overall performance of the device.

Career Highlights

Masao is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to push the boundaries of memory technology. His expertise and innovative approach have positioned him as a key player in the industry.

Collaborations

Masao collaborates with talented coworkers, including Teng Chen and Yan Wang, who contribute to the development of cutting-edge memory solutions.

Conclusion

Kuriyama Masao's contributions to memory device technology exemplify the spirit of innovation. His patents reflect a commitment to advancing electronic memory systems, making a lasting impact on the industry.