The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Apr. 10, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Yang Zhang, Wuhan, CN;

Yan Wang, Wuhan, CN;

Jing Wei, Wuhan, CN;

Masao Kuriyama, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 12/02 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G06F 12/0246 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01);
Abstract

The present disclosure provides memories, operation methods of memories, and memory systems. An example memory includes: a memory cell array, word lines, a first select line, and a peripheral circuit. The peripheral circuit is configured to: in a first period of a recovery period of a verify operation, apply a first voltage to a first word line, and apply a second voltage to a second word line, wherein the second voltage is greater than the first voltage; in a second period of the recovery period of the verify operation, apply a third voltage to the first select line; and in a third period of the recovery period of the verify operation, apply a fourth voltage to the first word line, and apply a fifth voltage to the second word line, wherein the fifth voltage is greater than the fourth voltage.


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