The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Oct. 20, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Jialiang Deng, Wuhan, CN;

Zhuqin Duan, Wuhan, CN;

Lei Shi, Wuhan, CN;

Jing Wei, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01);
Abstract

Examples of the present application provide a memory, an operation method thereof and a memory system, and relate to, but are not limited to, the field of storage technology. The memory includes a peripheral circuit, a plurality of word lines and a plurality of rows of memory cells. Each row of the memory cells is coupled with one word line. The peripheral circuit is configured to apply a first voltage to a first word line of the plurality of word lines in each of a plurality of first time periods. A second voltage is applied to the first word line in a second time period between every two adjacent ones of the plurality of first time periods, wherein the second voltage is configured to turn on the memory cells coupled with the first word line. As such, the accuracy of data reading can be improved.


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