The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Oct. 15, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Kaikai You, Hubei, CN;

Lei Jin, Hubei, CN;

Xiangnan Zhao, Hubei, CN;

Lei Guan, Hubei, CN;

Ying Huang, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01);
Abstract

The present application provides a memory device, a method for operating a memory device, and a memory system. The memory device includes a memory array and a peripheral circuit coupled to the memory array, the memory array includes a memory block, and the memory block is coupled to the peripheral circuit through a word line. The memory block includes programmed memory cells and an unprogrammed memory cell, and the programmed memory cells include a first and a second memory cell. The peripheral circuit is configured to: perform a program operation on a third memory cell in the memory block, apply a first voltage to a first word line coupled to the first memory cell in a first phase of a channel preparation phase of the program operation; and apply a second voltage to a second word line coupled to the second memory cell.


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