This inventor holds 3 USPTO granted patents. Top assignees: Yangtze Memory Technologies., Ltd., Yangtze Memory Technologies Co., Ltd.. Active years: 2025-2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
2 out of 311 
1 out of 1,190 
Years Active: 2025-2026
Title: Xiangnan Zhao: Innovator in Memory Technology
Introduction
Xiangnan Zhao is a prominent inventor based in Hubei, China. He has made significant contributions to the field of memory technology, particularly in the development of three-dimensional NAND memory devices. With a total of 3 patents, Zhao's work has the potential to impact the future of data storage solutions.
Latest Patents
Zhao's latest patents include innovative designs and methods that enhance the performance of memory devices. One of his notable patents is for a "Three-dimensional NAND memory device and system and method for performing read operations thereof." This patent describes a memory device that utilizes memory cells addressed by word lines and bit lines, along with a peripheral circuit designed to optimize read operations. The circuit applies a read voltage to a selected word line while adjusting the pass voltage on adjacent unselected word lines based on the read voltage.
Another significant patent is titled "Method of reducing program operation time in 3D NAND memory systems." This invention outlines a memory device that includes a processor capable of programming memory cells with varying step voltage values. The processor determines when to increase the step voltage, thereby improving the efficiency of programming operations.
Career Highlights
Xiangnan Zhao has worked with notable companies in the technology sector, including Yangtze Memory Technologies Co., Ltd. and Yangtze Memory Technologies, Ltd. His experience in these organizations has allowed him to refine his expertise in memory technology and contribute to groundbreaking innovations.
Collaborations
Zhao has collaborated with talented individuals in the field, including HongTao Liu and Lei Guan. These partnerships have fostered a creative environment that encourages the development of advanced memory solutions.
Conclusion
Xiangnan Zhao is a key figure in the advancement of memory technology, with a focus on three-dimensional NAND memory devices. His patents reflect a commitment to innovation and efficiency in data storage. As technology continues to evolve, Zhao's contributions will likely play a crucial role in shaping the future of memory systems.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile