The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Mar. 22, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Hongtao Liu, Wuhan, CN;

Ying Huang, Wuhan, CN;

Lei Guan, Wuhan, CN;

Lei Jin, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 29/12 (2006.01); G11C 29/42 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3404 (2013.01); G11C 29/12005 (2013.01); G11C 29/42 (2013.01); G11C 2029/1204 (2013.01);
Abstract

The present disclosure discloses a memory, a memory system, a program method of a memory, and an electronic apparatus, relating to the technical field of memories. The memory includes a memory array and a peripheral circuit, wherein the memory array includes memory cells; the peripheral circuit is configured to perform a first program operation on the memory cells, perform a read operation on a memory page through a preset read voltage, and perform a second program operation on the memory cells in a case where a fail bit count read based on the read voltage meets a preset requirement.


Find Patent Forward Citations

Liu, Hongtao. (2026). Memory, memory system, program method of memory, and electronic apparatus (U.S. Patent No. 12592287). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12592287

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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