Wuhan, China

Hongtao Liu

This inventor holds 57 USPTO granted patents and 31 published patent applications and 6 EPO patents, primarily in 3D NAND Flash. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongtao Liu. Retrieved from https://idiyas.com/inventor/hongtao-liu-t7cletbz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 57 

% Patents Active = 71.9

 

Average Co-Inventor Count = 4.4

ph-index = 4

Forward Citations = 44(Granted Patents)


Location History:

  • Wuhan, CN (2020 - 2024)
  • Hubei, CN (2024)

Company Filing History:


Years Active: 2020-2026

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Areas of Expertise:
3D NAND Flash
Memory Device
Programming Method
Memory System
Erasing Method
Verification Method
Read Operation
Control Method
Bit Line Voltage
Semiconductor Device
Storage Modes
Non-Volatile Memory
57 patents (USPTO):Explore Patents

Title: Innovations of Hongtao Liu in Memory Technology

Introduction: Hongtao Liu, based in Wuhan, China, is an accomplished inventor with a remarkable portfolio of 32 patents. His work primarily focuses on advancements in memory devices and systems, contributing significantly to the field of memory technology.

Latest Patents: Among his latest innovations, two notable patents stand out. The first patent, titled "Memory device, memory system, and read operation method thereof," introduces a method to enhance read operations for memory cells. This invention optimizes the reading process by applying different pass voltages during a second read operation if the first read operation fails. This approach ensures more reliable memory cell access, thereby improving efficiency in memory technology.

The second patent, "Memory device, memory system, and program method thereof," outlines a programming methodology for memory devices. It consists of two programming operations that transition a memory cell from an intermediate state to a target state, effectively eliminating the need for verification during the first operation. The innovative design provides a fresh perspective on memory programming, making it more streamlined and effective.

Career Highlights: Hongtao Liu has played a pivotal role in developing memory technologies at Yangtze Memory Technologies Co., Ltd. and Yangzte Memory Technologies, Ltd., where his expertise has driven innovation and product development in cutting-edge memory solutions.

Collaborations: Throughout his career, Liu has collaborated with notable colleagues, including Ying Huang and Wenzhe Wei. These partnerships have helped foster a creative environment conducive to groundbreaking advancements in memory technologies.

Conclusion: Hongtao Liu's contributions to memory technology through his inventive patents highlight his significance as an innovator in the field. His dedication to enhancing memory systems continues to impact various applications, showcasing the potential of his innovations in modern technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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