The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Jan. 16, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Ying Huang, Wuhan, CN;

Hongtao Liu, Wuhan, CN;

Pengyu Xu, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/24 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/102 (2013.01); G11C 16/24 (2013.01); G11C 16/3459 (2013.01);
Abstract

In certain aspects, a memory device includes memory cells and a peripheral circuit coupled to the memory cells. The peripheral circuit is configured to perform a first program pass on the memory cells by skipping a programming on a first subset of the memory cells corresponding to a set of skipped program states. A target program state of each memory cell in the first subset is one of the set of skipped program states. The peripheral circuit is further configured to perform a second program pass on the memory cells.


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Huang, Ying. (2026). Memory device and program operation thereof (U.S. Patent No. 12793772). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12793772

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