Memory devices, program methods, and memory systems

Abstract

The present disclosure discloses a memory device, a program method, and a memory system. The memory device includes: a memory cell array and a peripheral circuit configured to: apply a verify voltage to a word line when incremental step pulse programming is performed on a plurality of memory cells, so as to perform a first verify operation on a first data state among the plurality of data states and perform a second verify operation on a second data state among the plurality of data states, wherein the first data state is adjacent to the second data state, and a distance between a first expected threshold voltage distribution corresponding to the first data state and a second expected threshold voltage distribution corresponding to the second data state is greater than a preset threshold; wherein the second program pulse is a previous program pulse of the first program pulse.