Wuhan, China

Yuanyuan Min

USPTO Granted Patents = 11 

 

Average Co-Inventor Count = 5.2

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022-2025

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11 patents (USPTO):

Title: Yuanyuan Min: Innovator in Semiconductor Technology

Introduction

Yuanyuan Min is a prominent inventor based in Wuhan, China, known for his significant contributions to semiconductor technology. With a total of 11 patents to his name, Min has made remarkable advancements in programming methods for semiconductor devices.

Latest Patents

Among his latest patents, Min has developed a programming method for semiconductor devices that enhances the efficiency of memory operations. This method involves a semiconductor device that includes a memory string with multiple first memory cells and a first dummy cell. The programming phase applies a first pass voltage to a word line corresponding to an unprogrammed memory cell, followed by a programming voltage to the target memory cell. Another notable patent focuses on improving program operation speed in 3D NAND systems. This innovation utilizes incremental step pulse programming (ISPP) to optimize the programming process for memory cells, ensuring that different target voltages are effectively managed.

Career Highlights

Yuanyuan Min is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of memory devices, making them faster and more efficient.

Collaborations

Min collaborates with talented individuals in his field, including XiangNan Zhao and Yali Song, who contribute to the innovative projects at Yangtze Memory Technologies Co., Ltd.

Conclusion

Yuanyuan Min's contributions to semiconductor technology through his patents and innovative methods have positioned him as a key figure in the industry. His work not only enhances the performance of memory devices but also paves the way for future advancements in the field.

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