The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2023

Filed:

Feb. 26, 2021
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Yali Song, Wuhan, CN;

Xiangnan Zhao, Wuhan, CN;

Yuanyuan Min, Wuhan, CN;

Kaikai You, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 7/10 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/28 (2006.01); G11C 16/30 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 7/1048 (2013.01); G11C 16/0433 (2013.01); G11C 16/08 (2013.01); G11C 16/28 (2013.01); G11C 16/30 (2013.01); G11C 16/3404 (2013.01);
Abstract

A three-dimensional (3D) memory device may include a first set of memory layers, a second set of memory layers above the first set of memory layers, and a first dummy memory layer between the first and second sets of memory layers. The 3D memory device may further include a peripheral circuit that includes a word line (WL) driving circuit configured to when programming a first memory layer of the first set of memory layers, apply a first pre-charge voltage to the first dummy memory layer during a pre-charge period associated with the first memory layer, and when programming a second memory layer of the first set of memory layers located above the first memory layer, apply a second pre-charge voltage to the first dummy memory layer during a pre-charge period associated with the second memory layer. The first pre-charge voltage may be larger than the second pre-charge voltage.


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