logo

For the Inventor, By the Inventor

Wuhan, China

XiangNan Zhao

This inventor holds 42 USPTO granted patents and 34 published patent applications and 4 EPO patents, primarily in NAND Memory Technology. Top assignees: Yangtze Memory Technologies Co., Ltd., Yangtze Memory Technologies., Ltd.. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: XiangNan Zhao. Retrieved from https://idiyas.com/inventor/xiangnan-zhao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 42 

% Patents Active = 73.8

 

Average Co-Inventor Count = 3.8

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:

goldMedal28 out of 1,190 
 
Yangtze Memory Technologies Co., Ltd.
 patents
silverMedal14 out of 299 
 
Yangtze Memory Technologies., Ltd.
 patents

Years Active: 2021-2026

Loading Chart...
Loading Chart...
Areas of Expertise:
NAND Memory
Memory Programming
Data Read Method
Program Disturbance
3D NAND Systems
Memory Architecture
Voltage Adjustment
Memory Device
Memory System
Operation Method
Three-Dimensional Memory
Threshold Voltage Shift
42 patents (USPTO):Explore Patents
1. 12712024 - MEMORY, MEMORY PROGRAMMING METHOD AND MEMORY SYSTEM (2026-08-18),
2. 12705170 - Multi-phase method for operating a memory with erase verification, memory and, memory system (2026-08-11),
3. 12700457 - Memory device and program operation thereof (2026-08-04),
4. 12665040 - Memory device, memory system, and method of operating the same using bit line bias voltage scheme (2026-06-23),
5. 12658265 - Memory devices and operation methods thereof, and memory systems (2026-06-16),
6. 12639002 - Memory device and operation method thereof (2026-05-26),
7. 12638981 - Memory device, memory system, and program operation method thereof (2026-05-26),
8. 12633356 - Method and memory used for reducing program disturbance by adjusting voltage of dummy word line (2026-05-19),
9. 12620441 - Memory, operation method of memory, and memory system (2026-05-05),
10. 12609168 - Offset voltage based operation method of memory system, data read method of memory and memory system (2026-04-21),
11. 12602165 - Method of improving programming operations in 3D NAND systems (2026-04-14),
12. 12555642 - Architecture and method for NAND memory operation (2026-02-17),
13. 12548625 - Memory device to program multiple bit lines using a single word line programming pulse (2026-02-10),
14. 12537067 - Method of operating memory, memory, and memory system (2026-01-27),
15. 12499949 - Memory devices and operating methods thereof, memory systems (2025-12-16),

Title: Innovations and Contributions of XiangNan Zhao in Memory Technology

Introduction

XiangNan Zhao is a prominent inventor based in Wuhan, China, known for his groundbreaking work in memory technology. With a remarkable total of 25 patents to his name, Zhao has made significant contributions to the development of advanced memory devices, enhancing both their functionality and efficiency.

Latest Patents

Among Zhao's latest patents is a innovative memory device, memory system, and program operation method. This invention discusses an iprogramming loop where, upon determining that index i is greater than or equal to a first preset value and less than an initial verification loop number, an iprogramming inhibition operation can be performed on specific memory cells. The precise management of programming loops user imposes can vastly improve memory performance and reliability.

Another significant patent involves a memory device, memory system, and a read operation method. In this invention, if a first read operation on one memory cell has failed, a second read operation is initiated. This method specifies the application of two different pass voltages to unselected word lines, enhancing the probability of successfully reading the target memory cell. The innovative approach to read operations recognizes the need for robust memory reliability in contemporary technology.

Career Highlights

XiangNan Zhao has built a substantial career at Yangtze Memory Technologies Co., Ltd., a leading firm in the semiconductor industry. His extensive portfolio of patents reflects not only his commitment to advancing memory technology but also his role in shaping the future of data storage solutions.

Collaborations

Zhao has collaborated with talented individuals such as Yali Song and Jianquan Jia. Together, they have produced innovative solutions that address the complex challenges faced in the field of memory systems, further expanding the horizons of technological advancements.

Conclusion

XiangNan Zhao's contributions to memory technology through his innovative patents have made a significant impact on the field. His work at Yangtze Memory Technologies Co., Ltd., along with his collaborations, underscores a dedication to pushing the boundaries of what's possible in memory devices. As technology continues to evolve, Zhao's inventions will undoubtedly play a crucial role in shaping the future of data storage and management.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…